Our mixed technology assemblies include:

• Flip-Chip
• Wire Bond
• Stacked Chip/Combination Assembly
• Chip-on-Flex/Chip-on-Ceramic
  

FLIP CHIP

A “flip-chip” describes the method of electronically connecting the IC to a substrate. In flip-chip packaging, this interconnect is made through a conductive “bump” that is placed directly on the die surface. The bumped die is then “flipped over” and placed face down with the bumps connecting to the carrier directly. A bump is typically 70-100 micro-millimeters high and 100-125 micro-millimeters in diameter. The flip-chip connection is generally formed in one of two ways: solder or conductive adhesive.

Associated technical data:

• Stud Bump
  With gold ball stud bumping, any wire-bondable chip can be turned into a flip chip, at either the individual die level or wafer level with no additional water processing.
• Gold bump
• Solder bump

WIRE BOND

We use aluminum (Al) and gold (Au) wire bonding processes. Both types of wire are welded using a special bonding agent (heat and ultrasound energy) and fall into one of three major processes: Thermocompression bonding (T/C), Ultrasound bonding (U/S) and Thermosonic bonding (T/S).

Associated technical data

• Gold wire bonding
  • 100um pitch capability
  • 001” wire diameter
  • Gold ball bonding process
  • Bonding to a .002” pad
  • Bond speed of approximately 8 bonds per second
• Aluminum wire bonding
  • 70um pitch capability
  • Bond speed of approximately 5 bonds per second
    

STACKED CHIP / COMBINATION ASSEMBLY

• Miniaturization technology using either a flip-chip/wire bond combination or dual, stacked wire bonded chips.
• Dual or triple stack options available.
  

CHIP-ON-FLEX / CHIP-ON-CERAMIC

• Miniaturization option that can be employed with ceramic, flex, or rigid substrates.
• May utilize single chip or multiple chip stack combinations.